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RKZ68BKU
Zener Diodes for Surge Absorption Absorbing surges from bi-direction Aug 2006 RKZ6.8T Series is High ESD Level Guaranteed Bidirectional Zener Diode for Surge Absorption, Which Achieve the Surge Absorption of Two Directions with Two-terminal Package. What is the Bidirectional Zener Diode? Both Forward and Reverse Directions Achieve Same Zener Diode Characteristics Both forward and reverse directions have reverse direction characteristics of normal zener diode for surge absorption. 1.E-02 Iz 1.E-03 1.E-04 1.E-05 Forward I [A] 1.E-06 0 -Vz Vz Reverse 1.E-07 1.E-08 Internal circuit 1.E-09 1.E-10 1.E-11 -Iz Features 0 1 2 3 4 V [V] 5 6 7 8 Two Directions Surge Absorption with 1 Chip (Smaller mounting area and lower mounting cost) The surge absorption of 2 directions used to be applied with 2 chips/3 terminals packages. However the bidirectional zener diode can achieve them by one this product and also achieve the reduction of mounting area and the cost. Mounting area about 1/5 MPAK (2.8 x 1.5) Mounting area about 1/7 UFP (1.2 x 0.8) SFP (1.0 x 0.6) High ESD Level Guaranteed (25kV) Available using in a wide range of fields because both forward and reverse directions are high ESD level. Electrical characteristics of RKZ6.8TKJ/RKZ6.8TKK Part No. RKZ6.8TKJ SFP Reverse current 5.8~7.8 @ Iz=5mA UFP RKZ6.8TKK Zener voltage Vz (V) PKG 0.5 max @VR=3.5V IR (µA) 25 min @C=150pF/R=330Ω Each forward/reverse 10 times applied ESD: Electrostatic Discharge Application - Absorb foreign surges (LED, IC, etc.) - Noise limiter (Bus line) RKZ6.8TKJ RKZ6.8TKK Application Example (Fig.1) The circuit absorbs a foreign surge that getting into LED matrix module. LED Fig.1 Renesas Technology Corp. URL http://www.renesas.com/en/diode REJ01G0005-0100 ESD intensity (kV) ©2006. Renesas Technology Corp., All rights reserved.
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