SEMICONDUCTOR
KTA2014E
TECHNICAL DATA
EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
・Excellent hFE Linearity
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
・Low Noise : NF=1dB(Typ.), 10dB(Max.).
・Complementary to KTC4075E.
・Small Package.
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-50
V
Collector-Emitter Voltage
VCEO
-50
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-150
mA
Base Current
IB
-30
mA
Collector Power Dissipation
PC
100
mW
Junction Temperature
Tj
150
℃
Tstg
-55～150
℃
Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cut-off Current
ICBO
VCB=-50V, IE=0
-
-
-0.1
μ
A
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
μ
A
70
-
400
-
-0.1
-0.3
V
80
-
-
MHz
-
4
7
pF
-
1.0
10
dB
hFE (Note)
DC Current Gain
Collector-Emitter Saturation Voltage
VCE(sat)
fT
Transition Frequency
Collector Output Capacitance
Cob
Noise Figure
NF
VCE=-6V, IC=-2mA
IC=-100mA, IB=-10mA
VCE=-10V, IC=-1mA
VCB=-10V, IE=0, f=1MHz
VCE=-6V, IC=-0.1mA
f=1kHz, Rg=10kΩ
Note : hFE Classification O(2):70～140, Y(4):120～240, GR(6):200～400
2014. 3. 31
Revision No : 1
1/3
