DATA SHEET
NPN SILICON RF TRANSISTOR
2SC3356
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR MICROWAVE LOW-NOISE AMPLIFICATION
3-PIN MINIMOLD
FEATURES
• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz
• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
2SC3356
50 pcs (Non reel)
• 8 mm wide embossed taping
2SC3356-T1B
3 kpcs/reel
• Pin 3 (Collector) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3.0
V
IC
100
mA
200
mW
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10209EJ02V0DS (2nd edition)
Date Published June 2004 CP(K)
Printed in Japan
The mark
shows major revised points.
NEC Compound Semiconductor Devices, Ltd.1985, 2004
