RN1114~RN1118
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1114, RN1115, RN1116, RN1117, RN1118
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
With built-in bias resistors.
Simplified circuit design
Reduced number of parts and simplified manufacturing process
Complementary to RN2114 to 2118
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1114
1
10
RN1115
2.2
10
RN1116
4.7
10
RN1117
10
4.7
RN1118
47
10
JEDEC
―
JEITA
―
TOSHIBA
2-2H1A
Weight: 2.4mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Symbol
RN1114 to 1118
Rating
Unit
VCBO
50
V
VCEO
50
V
RN1114
RN1115
Emitter-base voltage
5
6
RN1116
VEBO
7
RN1117
15
RN1118
25
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note:
V
IC
RN1114 to 1118
100
mA
PC
100
mW
Tj
150
°C
Tstg
−55 to 150
°C
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2010-04-06