This product complies with the RoHS Directive (EU 2002/95/EC).
Schottky Barrier Diodes (SBD)
MA22D17
Silicon epitaxial planar type
For high frequency rectification
Unit: mm
Features
0.80±0.05
1.6±0.1
Reverse voltage VR = 100 V is guaranteed
High non-repetitive peak forward surge current: IFSM = 20 A
1
2.6±0.1
3.5±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
0 to 0.1
Symbol
Rating
Unit
VR
100
V
VRRM
Forward current (Average) *1
IF(AV)
Non-repetitive peak forward surge current *2
IFSM
Junction temperature
Storage temperature
300
A
°C
°C
1: Anode
2: Cathode
Note) *1: Mounted on an alumina PC board
*2: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Reverse current
IR
Terminal capacitance
Ct
on
tin
isc
ce
/D
Marking Symbol: 3T
Conditions
Min
Typ
Max
Unit
IF = 300 mA
0.49
0.57
V
70
200
µA
ue
VF
trr
Mini2-F1 Package
VR = 100 V
Forward voltage
Reverse recovery time *
0.16+0.1
–0.06
mA
–55 to +125
5°
V
125
Tstg
100
20
Tj
0.45±0.1
0.55±0.1
0 to 0.3
Repetitive peak reverse voltage
2
0 to 0.1
Reverse voltage
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Parameter
5°
Absolute Maximum Ratings Ta = 25°C
VR = 0 V, f = 1 MHz
100
pF
7
ns
IF = IR = 100 mA, Irr = 10 mA,
RL = 100 Ω
Ma
int
en
an
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: December 2004
VR
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
SKH00140AED
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 10 mA
IF = IR = 100 mA
RL = 100 Ω
1
