TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/525
Devices
Qualified Level
2N6546
JAN
JANTX
JANTXV
2N6547
MAXIMUM RATINGS
Ratings
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Symbol
VCEO
VCEX
VEBO
IB
IC
@ TC = +250C (1)
@ TC = +1000C (1)
Operating & Storage Temperature Range
PT
Top, Tstg
2N6546
300
600
2N6547
400
850
8
10
15
175
100
-65 to +200
Units
Vdc
Vdc
Vdc
Adc
Adc
W
W
0
C
TO-3 (TO-204AA)*
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Symbol
Max.
1.0
RθJC
1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C
Unit
C/W
0
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
2N6546
2N6547
V(BR)CEO
300
400
2N6546
2N6547
ICEX
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Collector-Emitter Cutoff Current
VCE = 600 Vdc; VBE = 1.5 Vdc
VCE = 850 Vdc; VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 8 Vdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
IEBO
Vdc
1.0
1.0
1.0
mAdc
mAdc
120101
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