This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR412x Series
Silicon PNP epitaxial planar type
For digital circuits
■ Package
• Code
NS-A1
• Pin Name
1: Emitter
2: Collector
3: Base
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■ Features
■ Resistance by Part Number
•
•
•
•
(R1)
2.2 kΩ
4.7 kΩ
10 kΩ
2.2 kΩ
UNR4121
UNR4122
UNR4123
UNR4124
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• Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
• New S type package, allowing supply with the radial taping
(R2)
2.2 kΩ
4.7 kΩ
10 kΩ
10 kΩ
■ Internal Connection
R1
C
B
■ Absolute Maximum Ratings Ta = 25°C
R2
Parameter
Symbol
Rating
Collector-base voltage (Emitter open)
VCBO
−50
V
Collector-emitter voltage (Base open)
VCEO
E
Unit
IC
Total power dissipation
PT
Junction temperature
Tj
Storage temperature
Tstg
−50
V
−500
mA
300
mW
150
°C
−55 to +150
°C
ce
/D
isc
on
tin
ue
Collector current
an
■ Electrical Characteristics Ta = 25°C ± 3°C
Symbol
VCBO
IC = −10 µA, IE = 0
−50
Collector-emitter voltage (Base open)
VCEO
IC = −2 mA, IB = 0
−50
Collector-base cutoff current (Emitter open)
ICBO
VCB = −50 V, IE = 0
Collector-emitter cutoff current (Base open)
ICEO
VCE = −50 V, IB = 0
−1
µA
Emitter-base
IEBO
VEB = −6 V, IC = 0
−5
mA
Ma
int
en
Parameter
Collector-base voltage (Emitter open)
UNR4121
Conditions
Typ
Max
Unit
V
V
−1
µA
−2
cutoff current UNR4122
−1
(Collector open) UNR4123/4124
Publication date: August 2008
Min
SJH00019CED
1
