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RD10E-B3
DATA SHEET ZENER DIODES RD2.0E to RD120E 500 mW PLANAR TYPE SILICON ZENER DIODES The RD2.0E to RD120E are zener diodes with an allowable PACKAGE DRAWING (UNIT: mm) dissipation of 500 mW and a planar type glass sealed DHD (double heatsink diode) structure. FEATURES • The zener voltage series has a wide voltage range of 2 V to 120 V and is ideal for standardization. • The E24 series is employed for the zener voltage nominal value. ORDERING INFORMATION Any of the B1 to B7 voltage classifications are available for customers who request the B grade product of the RD2.0E to RD39E. APPLICATIONS • Zener voltage and constant-current circuit Marking color: Black JEDEC: DO-35 • Waveform clipper circuit and limiter circuit • Surge absorption circuit ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) ° Parameter Ratings Unit Power dissipation P Symbol 500 mW Junction temperature Ti 175 °C Forward current IF 200 mA Storage temperature Tstg –65 to +175 °C Surge reverse power PRSM 100 (t = 100 µs) W Remarks Refer to Figure 6. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D10211EJ5V0DS00 (5th) Date Published April 2002 N CP(K) Printed in Japan © 2002 1998
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