M58LW064C
64 Mbit (4Mb x 16, Uniform Block, Burst)
3V Supply Flash Memory
FEATURES SUMMARY
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WIDE x16 DATA BUS for HIGH BANDWIDTH
SUPPLY VOLTAGE
– VDD = 2.7 to 3.6V core supply voltage for
Program, Erase and Read operations
– VDDQ = 1.8 to VDD for I/O Buffers
SYNCHRONOUS/ASYNCHRONOUS READ
– Synchronous Burst read
– Asynchronous Random Read
– Asynchronous Address Latch Controlled
Read
– Page Read
ACCESS TIME
– Synchronous Burst Read up to 56MHz
– Asynchronous Page Mode Read 110/
25ns
– Random Read 110ns
PROGRAMMING TIME
– 16 Word Write Buffer
– 12µs Word effective programming time
64 UNIFORM 64 KWord MEMORY BLOCKS
ENHANCED SECURITY
– Block Protection/ Unprotection
– Smart Protection: irreversible block
locking system
– VPEN signal for Program Erase Enable
– 128 bit Protection Register with 64 bit
Unique Code in OTP area
PROGRAM and ERASE SUSPEND
COMMON FLASH INTERFACE
100,000 PROGRAM/ERASE CYCLES per
BLOCK
ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code M58LW064C : 8820h
PACKAGES
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
August 2004
Figure 1. Packages
TSOP56 (N)
14 x 20 mm
TBGA
TBGA64 (ZA)
10 x 13 mm
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