M29W400DT
M29W400DB
4 Mbit (512 Kb x 8 or 256 Kb x 16, boot block)
3 V supply Flash memory
Features
Supply voltage
– VCC = 2.7 V to 3.6 V for Program, Erase
and Read
SO44 (M)(1)
Access time: 45, 55, 70 ns
Programming time
– 10 μs per byte/word typical
11 memory blocks
– 1 boot block (top or bottom location)
– 2 parameter and 8 main blocks
TSOP48 (N)
12 x 20 mm
Program/Erase controller
– Embedded byte/word program algorithms
FBGA
Erase Suspend and Resume modes
– Read and Program another block during
Erase Suspend
TFBGA48 (ZA)(1)
6 x 9 mm
Unlock bypass program command
– Faster production/batch programming
FBGA
Temporary block unprotection mode
Low power consumption
– Standby and Automatic Standby
TFBGA48 (ZE)
6 x 8 mm
100,000 Program/Erase cycles per block
Electronic signature
– Manufacturer code: 0020h
– Top device code M29W400DT: 00EEh
– Bottom device code M29W400DB: 00EFh
– RoHS packages
1. These packages are no more in mass production.
Automotive Device Grade 3
– Temperature: –40 to 125 °C
– Automotive grade certified
April 2009
Rev 8
1/48
www.numonyx.com
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