TPC8106-H
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (High Speed U−MOSII)
TPC8106−H
High Speed and High Efficiency DC−DC Converters
Lithium Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
Unit: mm
Small footprint due to small and thin package
High speed switching
Small gate charge
: Qg = 52 nC (typ.)
Low drain−source ON resistance
: RDS (ON) = 14 mΩ (typ.)
High forward transfer admittance : |Yfs| = 16.6 S (typ.)
Low leakage current : IDSS = −10 µA (max) (VDS = −30 V)
Enhancement−mode : Vth = −0.8~ −2.0 V (VDS =− 10 V, ID = −1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−30
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−30
V
Gate-source voltage
VGSS
±20
V
JEDEC
―
JEITA
―
TOSHIBA
DC
(Note 1)
ID
−10
Pulse
(Note 1)
IDP
−40
Drain power dissipation
(t = 10 s)
(Note 2a)
PD
2.4
Drain power dissipation
(t = 10 s)
(Note 2b)
PD
1.0
W
Single pulse avalanche energy
(Note 3)
EAS
130
mJ
Avalanche current
IAR
−10
A
Repetitive avalanche energy
(Note 2a) (Note 4)
EAR
0.24
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
2-6J1B
W
°C
Drain current
A
Weight: 0.080 g (typ.)
Circuit Configuration
Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the
next page.
This transistor is an electrostatic sensitive device. Please handle with
caution.
1
2002-02-06
