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TLN117C,F
TLN117(F) TOSHIBA Infrared LED GaAs Infrared Emitter TLN117(F) Opto-Electronic Switches Floppy Disk Drives Optical Mice Optical Touch Sensors Unit: mm • Small side-view epoxy-resin package • High radiant intensity: IE = 0.8 mW / sr(min)at IF = 20 mA • Half-angle value: θ1 / 2 = ±15°(typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Forward current IF 50 mA Pulse forward current IFP Forward current derating (Ta > 25°C) 600 (Note 1) mA ΔIF / °C −0.33 mA / °C Reverse voltage VR 5 V Operating temperature Topr −25 to 85 °C Storage temperature Tstg −40 to 100 °C Soldering temperature (5s) Tsol 260 (Note 2) °C TOSHIBA 4−3P1 Weight: 0.1 g (typ.) Pin Connection Note: Using continuously under heavy loads (e.g. the application of high 1. Cathode 1 2 temperature/current/voltage and the significant change in 2. Anode temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Pulse width < 100 μs, repetitive frequency =100 Hz Note 2: Solder the LED no closer than 2mm from the base of the lead. 1 2008-07-11 Allowable pulse forward current IFP (mA) TLN117(F) IF – Ta Allowable forward current IF (mA) 80 60 40 IFP – PW 3000 Ta = 25°C 1000 f = 100 Hz 500 200 Hz 300 500 Hz 100 50 0 20 60 40 80 10 kHz 10 3μ 20 30 10 μ 5 kHz 2 kHz 100 μ 300 μ 30 μ Pulse width 100 1 kHz PW 1m 3m 10 m (s) Ambient temperature Ta (°C) IF – V F (typ.) IE – IFP 50 (typ.) 30 30 10 Radiant intensity IE (mW / sr) (mA) Forward current IF Pulse 10 Ta = 75°C 50 5 25 -25 0 3 5 3 1 DC 0.5 Pulse width < 100 μs Repetitive Frequency = 100 Hz Ta = 25°C 0.3 1 0.9 1.0 1.1 1.2 1.3 Forward voltage VF 1.4 1.5 0.1 1 (V) 3 10 30 100 300 Pulse forward current IFP (mA) 3 2008-07-11
TOSHIBA
株式会社 東芝セミコンダクター&ストレージ社
日本
半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI
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