HMC313 / 313E
v06.0109
GaAs InGaP HBT MMIC BROADBAND
AMPLIFIER GAIN BLOCK, DC - 6 GHz
Typical Applications
DRIVER & GAIN BLOCK AMPLIFIERS - SMT
Ideal as a Driver & Amplifier for:
P1dB Output Power: +14 dBm
• 2.2 - 2.7 GHz MMDS
Output IP3: +27 dBm
• 3.5 GHz Wireless Local Loop
9
Features
Gain: 17 dB
• 5 - 6 GHz UNII & HiperLAN
Single Supply: +5V
High Reliability GaAs HBT Process
Ultra Small Package: SOT26
Included in the HMC-DK001 Designer’s Kit
General Description
Functional Diagram
The HMC313 & HMC313E are GaAs InGaP
Heterojunction Bipolar Transistor (HBT) MMIC
amplifiers that operate from a single Vcc supply.
The surface mount SOT26 amplifier can be used
as a broadband gain stage or used with external
matching for optimized narrow band applications.
With Vcc biased at +5V, the HMC313(E) offers 17 dB
of gain and +15 dBm of saturated power while only
requiring 50 mA of current.
Electrical Specifi cations, TA = +25 °C, Vcc = +5.0V
Vcc = +5V
Parameter
Units
Min.
Frequency Range
Gain
Typ.
Max.
DC - 6
14
GHz
Input Return Loss
17
20
dB
0.02
Gain Variation Over Temperature
0.03
dB/°C
7
dB
Output Return Loss
6
dB
Reverse Isolation
30
dB
14
dBm
15
dBm
27
dBm
Output Power for 1 dB Compression (P1dB) @ 1.0 GHz
11
Saturated Output Power (Psat) @ 1.0 GHz
Output Third Order Intercept (IP3) @ 1.0 GHz
24
Noise Figure
6.5
dB
Supply Current (Icc)
50
mA
Note: Data taken with broadband bias tee on device output.
9 - 26
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