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部品型式

TLP421D4-BL-TP1ROHS

製品説明
仕様・特性

TLP421 TOSHIBA Photocoupler GaAs Ired & Photo−Transistor TLP421 Unit in mm Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP421 consists of a silicone photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). • Collector-emitter voltage: 80V (min.) • Current transfer ratio: 50% (min.) TOSHIBA Rank GB: 100% (min.) Weight: 0.26 g (typ.) • Isolation voltage: 5000Vrms (min.) • UL recognized: UL1577 Pin Configurations • BSI approved: BS EN60065: 2002 (top view) 11−5B2 Approved no.8411 BS EN60950-1: 2002 1 • SEMKO approved: EN60065, EN60950, EN60335 4 2 Approved no.8412 3 Approved no.9910249/01 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1 2007-10-01 TLP421 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating IF 60 mA ΔIF / °C −0.7 mA / °C IFP 1 A PD 100 mW ΔPD / °C −1.0 mW / °C Reverse voltage VR 5 V Junction temperature Tj 125 °C Collector−emitter voltage VCEO 80 V Emitter−collector voltage VECO 7 V Collector current IC 50 mA Power dissipation(single circuit) PC 150 mW ΔPC / °C −1.5 mW / °C Tj 125 °C Operating temperature range Topr −55~100 °C Storage temperature range Tstg −55~125 °C Lead soldering temperature (10s) Tsol 260 °C Total package power dissipation PT 250 mW ΔPT / °C −2.5 mW / °C BVS 5000 Vrms Forward current Forward current derating(Ta ≥ 39°C) LED Pulse forward current (Note 2) Power dissipation Detector Power dissipation derating Power dissipation derating (Ta ≥ 25°C)(single circuit) Junction temperature Total package power dissipation derating (Ta ≥ 25°C) Isolation voltage (Note 3) Unit Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 2): 100μs pulse, 100Hz frequency (Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC ― 5 24 V Forward current IF ― 16 25 mA Collector current IC ― 1 10 mA Topr −25 ― 85 °C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 3 2007-10-01

ブランド

TOSHIBA

会社名

株式会社 東芝セミコンダクター&ストレージ社

本社国名

日本

事業概要

半導体部門、DRAM、フラッシュメモリ、プロセッサ、汎用LSI

供給状況

 
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