FW342
Ordering number : ENN7912
N-Channel and P-Channel Silicon MOSFETs
FW342
General-Purpose Switching Device
Applications
Features
•
•
•
For motor drives, inverters.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Conditions
N-channel
VDSS
VGSS
Gate-to-Source Voltage
Drain Current (DC)
ID
ID
Drain Current (PW≤10s)
Drain Current (PW≤100ms)
ID
IDP
Drain Current (PW≤10µs)
Allowable Power Dissipation
PD
Total Dissipation
PT
P-channel
Unit
30
--30
V
±20
±20
V
6
--5
A
duty cycle≤1%
7
--5.5
A
duty cycle≤1%
10
--9
A
duty cycle≤1%
24
--20
A
Mounted on a ceramic board
1.8
Mounted on a ceramic board
(1500mm2!0.8mm), PW≤10s
W
2.2
(1500mm2!0.8mm)1unit, PW≤10s
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
Unit
max
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
V(BR)DSS
IDSS
ID=1mA, VGS=0
30
V
1
µA
±10
VDS=30V, VGS=0
µA
IGSS
VGS(off)
VGS=±16V, VDS=0
VDS=10V, ID=1mA
1.2
Forward Transfer Admittance
yfs
RDS(on)1
VDS=10V, ID=6A
4.6
ID=6A, VGS=10V
25
33
Static Drain-to-Source On-State Resistance
RDS(on)2
RDS(on)3
ID=3A, VGS=4.5V
35
49
mΩ
ID=3A, VGS=4V
37
52
mΩ
Cutoff Voltage
Marking : W342
2.6
7.8
V
S
mΩ
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2004 TS IM TA-101197 No.7912-1/6
