NTGD1100L
Power MOSFET
8 V, ±3.3 A, Load Switch with Level−Shift,
P−Channel, TSOP−6
The NTGD1100L integrates a P and N−Channel MOSFET in a
single package. This device is particularly suited for portable
electronic equipment where low control signals, low battery voltages
and high load currents are needed. The P−Channel device is
specifically designed as a load switch using ON Semiconductor
state−of−the−art trench technology. The N−Channel, with an external
resistor (R1), functions as a level−shift to drive the P−Channel. The
N−Channel MOSFET has internal ESD protection and can be driven
by logic signals as low as 1.5 V. The NTGD1100L operates on supply
lines from 1.8 to 8.0 V and can drive loads up to 3.3 A with 8.0 V
applied to both VIN and VON/OFF
http://onsemi.com
V(BR)DSS
8.0 V
ID MAX
±3.3 A
55 mW @ −2.5 V
80 mW @ −1.8 V
SIMPLIFIED SCHEMATIC
Features
•
•
•
•
•
•
•
RDS(on) TYP
40 mW @ −4.5 V
4
Extremely Low RDS(on) Load Switch MOSFET
Level Shift MOSFET is ESD Protected
Low Profile, Small Footprint Package
VIN Range 1.8 to 8.0 V
ON/OFF Range 1.5 to 8.0 V
ESD Rating of 3000 V
Pb−Free Package is Available
2,3
Q2
6
Q1
5
1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
VIN
8.0
V
VON/OFF
8.0
V
Continuous Load Current Steady TA = 25°C
(Note 1)
State
TA = 85°C
IL
±3.3
A
Power Dissipation
(Note 1)
Steady TA = 25°C
State
TA = 85°C
PD
tp = 10 ms
ILM
±10
A
TJ,
TSTG
−55 to
150
°C
IS
−1.0
A
ESD
3.0
kV
TL
260
°C
Rating
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RmJA
150
°C/W
Junction−to−Foot – Steady State (Note 1)
RmJF
50
Input Voltage (VDSS, P−Ch)
ON/OFF Voltage (VGS, N−Ch)
Pulsed Load Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
ESD Rating, MIL−STD−883D HBM
(100 pF, 1.5 kW)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
±2.4
W
0.83
0.43
THERMAL RESISTANCE RATINGS
March, 2007 − Rev. 6
D1/G2
6
G1
5
1
TSOP−6
CASE 318G
STYLE 11
TZ M G
G
1
S1
TZ
M
G
S2
4
2 3
D2 D2
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
NTGD1100LT1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2007
MARKING DIAGRAM &
PIN ASSIGNMENT
1
NTGD1100LT1G
Package
Shipping †
TSOP−6
3000/Tape & Reel
TSOP−6
(Pb−Free)
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD1100L/D
