SSM6N15FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FE
High Speed Switching Applications
Analog Switching Applications
•
•
Unit: mm
Small package
Low ON resistance : Ron = 4.0 Ω (max) (@VGS = 4 V)
: Ron = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Unit
VDS
Drain-Source voltage
Rating
30
V
V
VGSS
±20
DC
ID
100
Pulse
IDP
200
Gate-Source voltage
Drain current
Drain power dissipation (Ta = 25°C)
PD (Note 1)
mA
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55~150
1: Source1
2: Gate1
3: Drain2
4: Source2
5: Gate2
6: Drain1
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure
rate, etc).
Note 1: Total rating, mounted on FR4 board
2
(25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 0.135 mm × 6)
JEDEC
―
JEITA
―
TOSHIBA
2-2N1D
Weight: 3mg (typ.)
0.45 mm
0.3 mm
Marking
6
Equivalent Circuit (top view)
5
4
6
2
4
Q1
DP
1
5
Q2
3
1
2
3
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
1
2007-11-01
