PRELIMPreliminaryPPPPPPPPPINARY
K6R4016C1B-C, K6R4016C1B-I
CMOS SRAM
Document Title
256Kx16 Bit High Speed Static RAM(5V Operating),
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No.
History
Draft Data
Rev. 0.0
Initial release with Design Target.
Jan. 1st, 1997
Design Target
Rev. 1.0
Release to Preliminary Data Sheet.
1.1. Replace Design Target to Preliminary.
Jun. 1st, 1997
Preliminary
Rev. 2.0
Release to Final Data Sheet.
2.1. Delete Preliminary.
2.2. Add 30pF capacitive in test load.
2.3. Relax DC characteristics.
Item
Previous
ICC
10ns
250mA
12ns
240mA
15ns
230mA
ISB
f=max.
40mA
Feb.11th.1998
Final
Jun. 27th 1998
Final
Rev. 2.1
Remark
Current
260mA
255mA
250mA
50mA
Change operating current at Industrial Temperature range.
Previous spec.
Changed spec.
Items
(10/12/15ns part)
(10/12/15ns part)
ICC
260/255/250mA
285/280/275mA
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 2.1
June 1998
