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S-4108
S4108 Data Sheet N-channel SiC power MOSFET bare die VDSS 1200V RDS(on) (Typ.) 80mW ID 31A*1 lFeatures lInner circuit 1) Low on-resistance 2) Fast switching speed (1) Gate (2) Drain (3) Source 3) Fast reverse recovery 4) Easy to parallel *1 Body Diode 5) Simple to drive lApplication ・Solar inverters ・DC/DC converters ・Switch mode power supplies ・Induction heating ・Motor drives lAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Value Unit VDSS 1200 V ID *1 31 A ID,pulse *2 77 A Gate - Source voltage VGSS -4 to 22 V Junction temperature Tj 175 °C Tstg -55 to +175 °C Drain - Source voltage Continuous drain current Tc = 25°C Pulsed drain current Range of storage temperature www.rohm.com © 2016 ROHM Co., Ltd. All rights reserved. 1/11 2016.08 - Rev.A
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