FCD4N60
N-Channel SuperFET® MOSFET
600 V, 3.9 A, 1.2
Features
Description
• 650 V @TJ = 150 °C
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is
utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology
is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching
power applications such as PFC, server/telecom power, FPD
TV power, ATX power and industrial power applications.
• Typ. RDS(on) = 1.0
• Ultra Low Gate Charge (Typ. Qg = 12.8 nC)
• Low Effective Output Capacitance (Typ. Coss.eff = 32 pF)
• 100% Avalanche Tested
• RoHS Compliant
Applications
• Lighting
• AC-DC Power Supply
• Solar Inverter
D
D
G
S
G
D-PAK
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol
VDSS
Drain to Source Voltage
Parameter
ID
Drain Current
IDM
Drain Current
VGSS
FCD4N60TM
600
Gate to Source Voltage
- Continuous (TC = 25oC)
3.9
- Continuous (TC = 100oC)
- Pulsed
Unit
V
A
2.5
11.7
A
±30
(Note 1)
V
mJ
EAS
Single Pulsed Avalanche Energy
(Note 2)
128
IAR
Avalanche Current
(Note 1)
3.9
A
EAR
Repetitive Avalanche Energy
(Note 1)
5.0
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
4.5
V/ns
(TC = 25oC)
50
PD
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
TL
- Derate above 25oC
W
0.4
W/oC
-55 to +150
o
C
300
o
C
Thermal Characteristics
Symbol
Parameter
FCD4N60TM
Unit
RJC
Thermal Resistance, Junction to Case, Max.
2.5
o
C/W
RJA
Thermal Resistance, Junction to Ambient, Max.
83
o
C/W
©2008 Fairchild Semiconductor Corporation
FCD4N60 Rev. C1
1
www.fairchildsemi.com
FCD4N60 — N-Channel SuperFET® MOSFET
October 2013
