PD - 97047B
IRFB3077PbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
l Worldwide Best RDS(on) in TO-220
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
HEXFET® Power MOSFET
D
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
75V
2.8m:
3.3m:
210A c
ID (Package Limited)
120A
D
G
D
S
TO-220AB
IRFB3077PbF
G
D
S
G ate
Drain
Source
Absolute Maximum Ratings
Max.
Units
ID @ TC = 25°C
Symbol
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Parameter
210c
A
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
150c
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
120
IDM
Pulsed Drain Current d
850
PD @TC = 25°C
Maximum Power Dissipation
370
W
W/°C
V
Linear Derating Factor
2.5
VGS
Gate-to-Source Voltage
± 20
dV/dt
TJ
Peak Diode Recovery f
2.5
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
V/ns
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lbxin (1.1Nxm)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy e
IAR
Avalanche Current d
EAR
Repetitive Avalanche Energy g
200
mJ
See Fig. 14, 15, 22a, 22b,
A
mJ
Thermal Resistance
Typ.
Max.
RθJC
Symbol
Junction-to-Case k
–––
0.402
RθCS
Case-to-Sink, Flat Greased Surface
0.50
–––
RθJA
Junction-to-Ambient jk
–––
62
www.irf.com
Parameter
Units
°C/W
1
5/2/11
