2SK1120
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSII.5)
2SK1120
DC−DC Converter and Motor Drive Applications
Low drain−source ON resistance
: RDS (ON) = 1.5 Ω (typ.)
High forward transfer admittance
Unit: mm
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 300 μA (max) (VDS = 800 V)
Enhancement mode
: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source voltage
VDSS
1000
V
Drain−gate voltage (RGS = 20 kΩ)
VDGR
1000
V
2. DRAIN (HEAT SINK)
Gate−source voltage
VGSS
±20
V
3. SOURCE
(Note 1)
ID
8
Pulse (Note 1)
IDP
24
Drain power dissipation (Tc = 25°C)
PD
150
W
TOSHIBA
Channel temperature
Tch
150
°C
Weight: 4.6 g (typ.)
Storage temperature range
Tstg
−55 to 150
°C
Drain current
DC
1. GATE
JEDEC
A
―
JEITA
―
2-16C1B
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
0.833
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
50
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
1
2009-09-29
