製品説明 仕様・特性: CRY62 to CRZ39 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62 to CRZ39 ○ Surge absorber Unit: mm  Average power dissipation : P = 0.7 W  Zener voltage : VZ = 6.2 to 39 V  Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Power dissipation P 0.7 W Junction temperature Tj −40 to 150 °C Tstg −40 to 150 °C Storage temperature range JEDEC ― Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 3-2A1S temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.013 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Land Pattern Dimensions (reference only) Unit: mm 1.2 1.2 2.8 Start of commercial production 1999-09 1 2014-10-09

お探し商品CRZ39TE85Lは、クレバーテックの営業スタッフが市場確認を行いメールにて結果を御連絡致します。

「見積依頼」をクリックして　どうぞお進み下さい。

弊社からの見積回答メールの返信又はFAXにてお願いします。

類似型番をお探しのお客様はこちらをクリックして下さい。
CRZ30	CRZ30T5L,TEM,Q	CRZ30TE85L	CRZ30TE85L,Q	CRZ30TE85,Q
CRZ30TE85R	CRZ-3-1-XG-001	CRZ33	CRZ33T5L,TEM,Q	CRZ33TE85L
CRZ33TE85L,Q	CRZ33TE85L,Q,M	CRZ36	CRZ36TE85L	CRZ36TE85L,Q
CRZ36TE85L,Q,M	CRZ36TE85,Q	CRZ36TE85R	CRZ39	CRZ39T5L,TEM,Q
CRZ39TE85L	CRZ39TE85L,Q	CRZ39TE85L,Q,M	CRZ39TE85R

CRZ39TE85L TOSHIBA

部品型式