RN1407～RN1409
TOSHIBA Transistor
Silicon NPN Epitaxial Type (PCT Process)
RN1407, RN1408, RN1409
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
With built-in bias resistors
Simplified circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN2407~RN2409
Equivalent Circuit and Bias Resistor Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN1407
10
47
RN1408
22
47
RN1409
47
22
JEDEC
TO-236MOD
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012g (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
RN1407~RN1409
VCBO
50
V
Collector-emitter voltage
RN1407~RN1409
VCEO
50
V
RN1407
Emitter-base voltage
RN1408
6
VEBO
RN1409
7
V
15
Collector current
RN1407~RN1409
IC
100
mA
Collector power dissipation
RN1407~RN1409
PC
200
mW
Junction temperature
RN1407~RN1409
Tj
150
°C
Storage temperature range
RN1407~RN1409
Tstg
−55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
