PD - 94927A
IRFB41N15DPbF
IRFIB41N15DPbF
IRFS41N15DPbF
IRFSL41N15DPbF
Applications
l
l
HEXFET® Power MOSFET
High frequency DC-DC converters
Lead-Free
VDSS RDS(on) max
Benefits
l
l
l
Low Gate-to-Drain Charge to Reduce
Switching Losses
Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
Fully Characterized Avalanche Voltage
and Current
150V
0.045:
ID
41A
TO-220AB TO-220 FullPak
D2Pak
TO-262
IRFB41N15D IRFIB41N15D IRFS41N15D IRFSL41N15D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
Max.
Units
41
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
29
IDM
Pulsed Drain Current
164
PD @TA = 25°C
Power Dissipation, D Pak
3.1
PD @TC = 25°C
Power Dissipation, TO-220
200
PD @TC = 25°C
Power Dissipation, Fullpak
48
c
2
A
W
Linear Derating Factor, TO-220
1.3
W/°C
Linear Derating Factor, Fullpak
0.32
± 30
V
VGS
Gate-to-Source Voltage
dv/dt
TJ
Peak Diode Recovery dv/dt
Operating Junction and
TSTG
Storage Temperature Range
e
2.7
-55 to + 175
V/ns
°C
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw
1.1(10)
N•m (lbf•in)
Thermal Resistance
Typ.
Max.
Units
RθJC
Junction-to-Case
Parameter
–––
0.75
°C/W
RθJC
Junction-to-Case, Fullpak
–––
3.14
Rθcs
Case-to-Sink, Flat, Greased Surface
0.50
–––
RθJA
Junction-to-Ambient, TO-220
–––
62
RθJA
h
Junction-to-Ambient, D Pak i
RθJA
Junction-to-Ambient, Fullpak
Notes
2
h
–––
40
–––
65
through are on page 12
www.irf.com
1
08/10/06
