PRELIMPreliminaryPPPPPPPPPINARY
K6R4016V1D
CMOS SRAM
Document Title
256Kx16 Bit High Speed Static RAM(3.3V Operating).
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev No.
History
Draft Data
Rev. 0.0
Initial release with Preliminary.
Aug. 20. 2001
Preliminary
Rev. 0.1
Add Low Ver.
Sep. 19. 2001
Preliminary
Rev. 0.2
Package dimensions modify on page 11.
Sep. 28. 2001
Preliminary
Rev. 0.3
Change ICC , ISB, ISB1
Oct. 09. 2001
Preliminary
Nov.23. 2001
Preliminary
Dec.18. 2001
Final
Item
ICC(Commercial)
ICC(Industrial)
8ns
10ns
12ns
15ns
8ns
10ns
12ns
15ns
ISB
ISB1(L-ver.)
Previous
110mA
90mA
80mA
70mA
130mA
115mA
100mA
85mA
30mA
0.5mA
Rev. 0.4
1. Delete 12ns,15ns speed bin.
2. Change Icc for Industrial mode.
Item
8ns
ICC(Industrial)
10ns
Current
80mA
65mA
55mA
45mA
100mA
85mA
75mA
65mA
20mA
1.2mA
1. Correct AC parameters : Read & Write Cycle
2. Change Data Retention Current :
from 0.45mA to 1.1mA when Vcc=3.0V
from 0.35mA to 0.9mA when Vcc=2.0V
3. Limit L-Ver. to 48 TBGA Package
Rev. 1.0
Previous
100mA
85mA
Remark
Current
90mA
75mA
Rev. 2.0
1. Add tBA,tBLZ,tBHZ,tBW AC parematers.
Feb. 14. 2002
Final
Rev. 2.1
1. Correct the Package dimensions(48-TBGA)
Oct. 23. 2002
Final
Rev. 2.2
1. Add the tPU and tPD into the waveform.
Mar. 10, 2003
Final
Rev. 2.3
1. Change the current parameters (Isb1 L-ver, Idr)
June. 12, 2003
Final
Rev. 3.0
1. Add the Lead Free Package type.
June. 20, 2003
Final
Rev. 4.0
1. Change the Idr parameters
previous
Current
Idr(2V)
1.2mA
1.4mA
Idr(3V)
1.8mA
2.0mA
Mar. 15, 2004
Final
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Rev 4.0
Mar. 2004
