TC74HC4066AP/AF/AFN/AFT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74HC4066AP,TC74HC4066AF,TC74HC4066AFN,TC74HC4066AFT
Quad Bilateral Switch
The TC74HC4066A is a high speed CMOS QUAD BILATERAL
SWITCH fabricated with silicon gate C2MOS technology.
It consists of four independent high speed switches capable of
controlling either digital or analog signals while maintaining the
CMOS low power dissipation.
Control input (C) is provided to control the switch. The switch
turns ON while the C input is high, and the switch turns OFF
while low.
All inputs are equipped with protection circuits against static
discharge or transient excess voltage.
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74HC4066AP
TC74HC4066AF
Features
•
High speed: tpd = 7 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 1 μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 28% VCC (min)
•
Low ON resistance: RON = 50 Ω (typ.) at VCC = 9 V
•
High degree of linearity: THD = 0.05% (typ.) at VCC = 5 V
•
Pin and function compatible with 4066B
TC74HC4066AFN
TC74HC4066AFT
Weight
DIP14-P-300-2.54
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
1
: 0.96 g (typ.)
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
2009-05-01
TC74HC4066AP/AF/AFN/AFT
Absolute Maximum Ratings (Note 1)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 13
V
Control input voltage
VIN
−0.5 to VCC + 0.5
V
Switch I/O voltage
VI/O
−0.5 to VCC + 0.5
V
Control input diode current
IIK
±20
mA
I/O diode current
IOK
±20
mA
Switch through Current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
500 (DIP) (Note 2)/180 (SOP/TSSOP)
mW
Storage temperature
Tstg
−65 to 150
°C
Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 2: 500 mW in the range of Ta = −40 to 65°C. From Ta = 65 to 85°C a derating factor of −10 mW/°C should be
applied up to 300 mW.
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2 to 12
V
Control input voltage
VIN
0 to VCC
V
Switch I/O voltage
VI/O
0 to VCC
V
Operating temperature
Topr
−40 to 85
°C
0 to 1000 (VCC = 2.0 V)
Input rise and fall time
0 to 500 (VCC = 4.5 V)
tr, tf
0 to 400 (VCC = 6.0 V)
ns
0 to 250 (VCC = 10.0 V)
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused control inputs must be tied to either VCC or GND.
3
2009-05-01
