TC74VHC125,126F/FN/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74VHC125F,TC74VHC125FN,TC74VHC125FT,TC74VHC125FK TC74VHC126F,TC74VHC126FN,TC74VHC126FT,TC74VHC126FK TC74VHC125F/FN/FT/FK Quad Bus Buffer TC74VHC126F/FN/FT/FK Quad Bus Buffer Note: xxxFN (JEDEC SOP) is not available in Japan. TC74VHC125F, TC74VHC126F The TC74VHC125/126 are high speed CMOS QUAD BUS BUFFERs fabricated with silicon gate C2MOS technology. They achieve the high speed operation similar to equivalent Bipolar Shottky TTL while maintaining the CMOS low power dissipation. The TC74VHC125 requires the 3-state control input G to be set high to place the output into the high impedance state, whereas the TC74VHC126 requires the control input G to be set low to place the output into high impedance. An input protection circuit ensures that 0 to 5.5 V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5 V to 3 V systems and two supply systems such as battery back up. This circuit prevents device destruction due to mismatched supply and input voltages. TC74VHC125FN, TC74VHC126FN Features • High speed: tpd = 3.8 ns (typ.) at VCC = 5 V • Low power dissipation: ICC = 4 μA (max) at Ta = 25°C • High noise immunity: VNIH = VNIL = 28% VCC (min) • • Power down protection is provided on all inputs. Balanced propagation delays: tpLH ∼ tpHL − • Wide operating voltage range: VCC (opr) = 2 to 5.5 V • Low noise: VOLP = 0.8 V (max) • TC74VHC125FT, TC74VHC126FT Pin and function compatible with 74ALS125/126 TC74VHC125FK, TC74VHC126FK Weight SOP14-P-300-1.27A SOL14-P-150-1.27 TSSOP14-P-0044-0.65A VSSOP14-P-0030-0.50 1 : 0.18 g (typ.) : 0.12 g (typ.) : 0.06 g (typ.) : 0.02 g (typ.) 2007-10-01 TC74VHC125,126F/FN/FT/FK Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range VCC −0.5 to 7.0 V DC input voltage VIN −0.5 to 7.0 V VOUT −0.5 to VCC + 0.5 V Input diode current IIK −20 mA Output diode current IOK ±20 mA DC output current IOUT ±25 mA DC VCC/ground current ICC ±50 mA Power dissipation PD 180 mW Storage temperature Tstg −65 to 150 °C DC output voltage Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage VCC 2.0 to 5.5 V Input voltage VIN 0 to 5.5 V VOUT 0 to VCC V Operating temperature Topr −40 to 85 °C Input rise and fall time dt/dv Output voltage Note: 0 to 100 (VCC = 3.3 ± 0.3 V) 0 to 20 (VCC = 5 ± 0.5 V) ns/V The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 3 2007-10-01




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