TC74VHC125,126F/FN/FT/FK
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHC125F,TC74VHC125FN,TC74VHC125FT,TC74VHC125FK
TC74VHC126F,TC74VHC126FN,TC74VHC126FT,TC74VHC126FK
TC74VHC125F/FN/FT/FK Quad Bus Buffer
TC74VHC126F/FN/FT/FK Quad Bus Buffer
Note: xxxFN (JEDEC SOP) is not available in
Japan.
TC74VHC125F, TC74VHC126F
The TC74VHC125/126 are high speed CMOS QUAD BUS
BUFFERs fabricated with silicon gate C2MOS technology.
They achieve the high speed operation similar to equivalent
Bipolar Shottky TTL while maintaining the CMOS low power
dissipation.
The TC74VHC125 requires the 3-state control input G to be
set high to place the output into the high impedance state,
whereas the TC74VHC126 requires the control input G to be set
low to place the output into high impedance.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up.
This circuit prevents device destruction due to mismatched
supply and input voltages.
TC74VHC125FN, TC74VHC126FN
Features
•
High speed: tpd = 3.8 ns (typ.) at VCC = 5 V
•
Low power dissipation: ICC = 4 μA (max) at Ta = 25°C
•
High noise immunity: VNIH = VNIL = 28% VCC (min)
•
•
Power down protection is provided on all inputs.
Balanced propagation delays: tpLH ∼ tpHL
−
•
Wide operating voltage range: VCC (opr) = 2 to 5.5 V
•
Low noise: VOLP = 0.8 V (max)
•
TC74VHC125FT, TC74VHC126FT
Pin and function compatible with 74ALS125/126
TC74VHC125FK, TC74VHC126FK
Weight
SOP14-P-300-1.27A
SOL14-P-150-1.27
TSSOP14-P-0044-0.65A
VSSOP14-P-0030-0.50
1
: 0.18 g (typ.)
: 0.12 g (typ.)
: 0.06 g (typ.)
: 0.02 g (typ.)
2007-10-01
TC74VHC125,126F/FN/FT/FK
Absolute Maximum Ratings (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage range
VCC
−0.5 to 7.0
V
DC input voltage
VIN
−0.5 to 7.0
V
VOUT
−0.5 to VCC + 0.5
V
Input diode current
IIK
−20
mA
Output diode current
IOK
±20
mA
DC output current
IOUT
±25
mA
DC VCC/ground current
ICC
±50
mA
Power dissipation
PD
180
mW
Storage temperature
Tstg
−65 to 150
°C
DC output voltage
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Operating Ranges (Note)
Characteristics
Symbol
Rating
Unit
Supply voltage
VCC
2.0 to 5.5
V
Input voltage
VIN
0 to 5.5
V
VOUT
0 to VCC
V
Operating temperature
Topr
−40 to 85
°C
Input rise and fall time
dt/dv
Output voltage
Note:
0 to 100 (VCC = 3.3 ± 0.3 V)
0 to 20 (VCC = 5 ± 0.5 V)
ns/V
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
3
2007-10-01
