2SK3935
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI)
2SK3935
Switching Regulator Applications
Unit: mm
Low drain-source ON resistance:
RDS (ON) = 0.18 Ω (typ.)
High forward transfer admittance:
|Yfs| = 10 S (typ.)
Low leakage current:
IDSS = 100 μA (max) (VDS = 450 V)
Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
450
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
450
V
Gate-source voltage
VGSS
±30
V
(Note 1)
ID
17
A
Pulse (Note 1)
IDP
68
A
Drain power dissipation
PD
50
W
Single pulse avalanche energy
(Note 2)
EAS
919
mJ
Avalanche current
IAR
17
A
Repetitive avalanche energy (Note 3)
EAR
5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Drain current
DC
1: Gate
2: Drain
3: Source
−
JEDEC
JEITA
SC-67
TOSHIBA
2-10U1B
Weight: 1.7 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch−c)
2.5
°C / W
Thermal resistance, channel to
ambient
Rth (ch−a)
62.5
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C during
use of the device.
1
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 5.3 mH, RG = 25 Ω, IAR = 17 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature.
3
This transistor is an electrostatic-sensitive device. Handle with care.
1
2009-09-29
