MP6404
TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type (Six L2-π-MOSV inOne)
MP6404
Industrial Applications
High Power High Speed Switching Applications
3-Phase Motor Drive and Stepping Motor Drive
Applications
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Unit: mm
4-V gate drivability
Small package by full molding (SIP 12 pins)
High drain power dissipation (6-device operation)
: PT = 36 W (Tc = 25°C)
Low drain-source ON resistance: RDS (ON) = 120 mΩ (typ.) (Nch)
160 mΩ (typ.) (Pch)
High forward transfer admittance: |Yfs| = 5.0 S (typ.) (Nch)
4.0 S (typ.) (Pch)
Low leakage current: IGSS = ±10 µA (max) (VGS = ±16 V)
IDSS = 100 µA (max) (VDS = 60 V)
Enhancement-mode: Vth = 0.8 V to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Nch
Pch
Unit
JEDEC
―
V
JEITA
―
V
TOSHIBA
A
Weight: 3.9 g (typ.)
Drain-source voltage
VDSS
60
−60
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
60
−60
Gate-source voltage
VGSS
±20
±20
ID
5
−5
Pulse
IDP
20
−20
Drain power dissipation
(1-device operation, Ta = 25°C)
PD
Drain power dissipation Ta = 25°C
(6-device operation)
Tc = 25°C
PDT
Single pulse avalanche energy
(Note 1)
EAS
129
273
mJ
Avalanche current
IAR
5
−5
A
Drain current
DC
1 device
operation
Repetitive avalanche
energy
(Note 2) 6 device
operation
2.2
W
4.4
W
36
EAR
0.22
EART
2-32C1K
0.44
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note 1: Condition for avalanche energy (single pulse)
Nch: VDD = 25 V, starting Tch = 25°C, L = 7 mH, RG = 25 Ω, IAR = 5 A
Pch: VDD = −25 V, starting Tch = 25°C, L = 14.84 mH, RG = 25 Ω, IAR = −5 A
Note 2: Repetitive rating; pulse width limited by maximum channel temperature
Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2006-10-27
