CPH3116 / CPH3216
Ordering number : EN6405E
SANYO Semiconductors
DATA SHEET
CPH3116 / CPH3216
PNP / NPN Epitaxial Planar Silicon Transistors
DC / DC Converter Applications
Applications
•
Relay drivers, lamp drivers, motor drivers, flash.
Features
•
•
•
•
•
•
Adoption of MBIT processes.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm).
High allowable power dissipation.
( ) : CPH3116
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--50)80
V
Collector-to-Emitter Voltage
VCES
(--50)80
V
Collector-to-Emitter Voltage
VCEO
(--)50
V
Emitter-to-Base Voltage
VEBO
(--)5
V
(--)1.0
A
Collector Current
Base Current
IC
ICP
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Collector Current (Pulse)
(--)3
(--)200
Mounted on a ceramic board (600mm2!0.8mm)
A
mA
0.9
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
Emitter Cutoff Current
DC Current Gain
hFE
Marking : CPH3116 : AR, CPH3216 : CR
Conditions
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(-)100mA
Ratings
min
typ
max
Unit
(--)0.1
200
µA
(--)0.1
µA
560
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
81006EA MS IM / 62504 TS IM TB-00000308 / 83100 TS (KOTO) / 21000 TS (KOTO) TA-2706 No.6405-1/5
CPH3116 / CPH3216
IC -- VBE
--1.0
0.8
--0.6
--0.5
--0.4
--0.3
--0.1
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
0
--1.2
0.6
0.8
1.0
CPH3216
VCE=2V
7
5
Ta=75°C
DC Current Gain, hFE
3
--25°C
25°C
100
7
5
1.2
IT01646
hFE -- IC
1000
7
2
0.4
Base-to-Emitter Voltage, VBE -- V
CPH3116
VCE= --2V
5
0.2
IT01645
hFE -- IC
1000
DC Current Gain, hFE
0.7
C
25°C
--25°C
--0.7
Ta=7
5°
Collector Current, IC -- A
--0.8
--0.2
Ta=75°C
3
--25°C
2
25°C
100
7
5
3
3
2
2
10
--0.01
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
10
0.01
3
3
5
7
2
1000
7
5
3
2
100
7
5
3
5
7
1.0
2
3
IT01648
f T -- IC
CPH3216
VCE=10V
3
Gain-Bandwidth Product, f T -- MHz
CPH3116
VCE= --10V
2
0.1
Collector Current, IC -- A
5
3
3
2
--0.01
2
IT01647
f T -- IC
5
Gain-Bandwidth Product, f T -- MHz
CPH3216
VCE=2V
0.9
Ta=7
5°C
25°C
--25°C
Collector Current, IC -- A
--0.9
2
1000
7
5
3
2
100
7
5
3
2
3
5
7 --0.1
2
3
5
7 --1.0
Collector Current, IC -- A
2
2
0.01
3
2
3
5
3
2
10
7
5
3
3
5
7
2
1.0
3
IT01650
CPH3216
f=1MHz
7
Output Capacitance, Cob -- pF
5
2
0.1
Cob -- VCB
100
CPH3116
f=1MHz
7
7
Collector Current, IC -- A
IT01649
Cob -- VCB
100
Output Capacitance, Cob -- pF
IC -- VBE
1.0
CPH3116
VCE= --2V
5
3
2
10
7
5
3
2
2
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 --100
IT01651
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
Collector-to-Base Voltage, VCB -- V
5 7 100
IT01652
No.6405-3/5
