Si3434DV
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
ID (A)
0.034 at VGS = 4.5 V
6.1
0.050 at VGS = 2.5 V
30
RDS(on) (Ω)
5.0
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 2.5 V Rating for 30 V N-Channel
• Low RDS(on) for Footprint Area
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Li-lon Battery Protection
TSOP-6
Top View
1
6
2
5
3
3 mm
(1, 2, 5, 6) D
4
(3) G
2.85 mm
(4) S
Ordering Information: Si3434DV-T1-E3 (Lead (Pb)-free)
Si3434DV-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C
TA = 70 °C
Continuous Source Current (Diode Conduction)a
IS
TA = 25 °C
TA = 70 °C
PD
6.1
4.6
3.6
30
1.7
1.14
1.3
0.73
A
1.0
2.0
TJ, Tstg
Operating Junction and Storage Temperature Range
V
4.9
IDM
Pulsed Drain Current
Maximum Power Dissipationa
ID
Unit
- 55 to 150
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Symbol
t≤5s
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
40
62.5
90
110
25
Unit
30
°C/W
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 71610
S09-0766-Rev. B, 04-May-09
www.vishay.com
1
Si3434DV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
1200
1000
0.08
C - Capacitance (pF)
R DS(on) - On-Resistance (Ω)
0.10
0.06
VGS = 2.5 V
0.04
VGS = 4.5 V
Ciss
800
600
400
Coss
0.02
200
Crss
0.00
0
0
5
10
15
20
25
30
0
5
10
15
20
25
ID - Drain Current (A)
VDS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
VGS = 4.5 V
ID = 6.1 A
VDS = 15 V
ID = 6.1 A
1.4
4
R DS(on) - On-Resistance
(Normalized)
VGS - Gate-to-Source Voltage (V)
5
3
2
1.2
1.0
0.8
1
0.6
- 50
0
0
2
4
6
8
10
- 25
0
Qg - Total Gate Charge (nC)
50
75
100
125
150
On-Resistance vs. Junction Temperature
0.10
R DS(on) - On-Resistance (Ω)
30
10
TJ = 150 °C
TJ = 25 °C
1
0.0
25
TJ - Junction Temperature (°C)
Gate Charge
I S - Source Current (A)
30
0.08
ID = 6.1 A
ID = 2 A
0.06
0.04
0.02
0.00
0.2
0.4
0.6
0.8
1.0
1.2
0
1
2
3
4
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
5
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 71610
S09-0766-Rev. B, 04-May-09
www.vishay.com
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