QS6U24
4V Drive Pch+SBD MOSFET
Datasheet
l Outline
VDSS
-30V
RDS(on)(Max.)
400mΩ
ID
±1.0A
PD
1.25W
TSMT6
l Inner circuit
l Features
1) The QS6U24 combines Pch MOSFET with a
Schottky barrier diode in a single TSMT6
package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (4V drive).
4) Built-in Low V F schottky barrier diode.
5) Pb-free lead plating ; RoHS compliant.
l Packaging specifications
Embossed
Tape
Packing
Reel size (mm)
l Application
Tape width (mm)
Type
switching
180
8
Basic ordering unit (pcs)
3000
Taping code
TR
Marking
U24
l Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Value
Unit
Drain - Source voltage
VDSS
-30
V
Gate - Source voltage
VGSS
±20
V
ID
±1.0
A
ID, pulse*1
±2.0
A
IS
-0.3
A
IS, pulse*1
-1.2
A
PD*3
0.9
W/element
Junction temperature
Tj
150
℃
Continuous drain current
Pulsed drain current
Continuous source current (body diode)
Pulsed source current (body diode)
Power dissipation
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© 2015 ROHM Co., Ltd. All rights reserved.
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20150730 - Rev.001
QS6U24
Datasheet
l Electrical characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Typ.
Max.
Input capacitance
Ciss
VGS = 0V
-
90
-
Output capacitance
Coss
VDS = -10V
-
25
-
Reverse transfer capacitance
Crss
f = 1MHz
-
16
-
VDD ⋍ -15V, VGS = -4.5V
-
9
-
tr*4
ID = -0.5A
-
7
-
td(off)*4
RL = 30Ω
-
18
-
tf*4
RG = 10Ω
-
7
-
Turn - on delay time
Rise time
Turn - off delay time
Fall time
td(on)*4
pF
ns
l Gate charge characteristics (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Total gate charge
Gate - Source charge
Qgs*4
Gate - Drain charge
Qgd*4
1.7
-
-
0.6
-
-
VDD ⋍ -15V, ID = -1.0A
VGS = -5V
Max.
-
Qg*4
Typ.
0.4
-
nC
l Body diode electrical characteristics (Source-Drain) (Ta = 25°C)
Values
Parameter
Symbol
Conditions
Unit
Min.
Forward voltage
VSD*4
VGS = 0V, IS = -0.3A
Typ.
Max.
-
-
-1.2
V
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© 2015 ROHM Co., Ltd. All rights reserved.
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20150730 - Rev.001
