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2SK3019TL
2SK3019 Transistor 2.5V Drive Nch MOS FET 2SK3019 Dimensions (Unit : mm) Structure Silicon N-channel MOSFET EMT3 0.7 1.6 0.55 0.3 (1) 0.2 0.2 0.5 0.5 0.15 0.1Min. (2) 1.6 0.8 (3) Applications Interfacing, switching (30V, 100mA) 1.0 (1)Source Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Drive circuits can be simple. 5) Parallel use is easy. (2)Gate (3)Drain Abbreviated symbol : KN Packaging specifications Package Type Equivalent circuit Taping Drain TL Code Basic ordering unit (pieces) 3000 2SK3019 Gate Absolute maximum ratings (Ta=25°C) Symbol Limits Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 V ID ±100 mA IDP∗ ±400 mA Total power dissipation PD∗2 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 ∗ Gate Protection Diode °C Parameter Continuous Drain current Pulsed 1 Source ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use a protection circuit when the fixed voltages are exceeded. ∗1 Pw≤10µs, Duty cycle≤1% ∗2 With each pin mounted on the recommended lands. Thermal resistance Parameter Channel to ambient Symbol Limits Unit Rth(ch-a) ∗ 833 °C / W ∗ With each pin mounted on the recommended lands. Rev.C 1/3
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