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M29W040B55K6
M29W040B 4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory ■ SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ 8 UNIFORM 64 Kbytes MEMORY BLOCKS ■ PROGRAM/ERASE CONTROLLER PLCC32 (K) TSOP32 (N) 8 x 20mm – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits ■ ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend ■ TSOP32 (NZ) 8 x 14mm UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming ■ LOW POWER CONSUMPTION – Standby and Automatic Standby ■ 100,000 PROGRAM/ERASE CYCLES per BLOCK ■ Figure 1. Logic Diagram 20 YEARS DATA RETENTION VCC – Defectivity below 1 ppm/year ■ ELECTRONIC SIGNATURE – Manufacturer Code: 20h – Device Code: E3h ■ 19 8 A0-A18 DQ0-DQ7 ECOPACK® PACKAGES AVAILABLE W M29W040B E G VSS AI02953 September 2005 1/20
STM
STMicroelectronics NV
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