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2SD1411AY
2SD1411A TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD1411A High-Current Switching Applications Power Amplifier Applications Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) at IC = 4 A • Complementary to 2SB1018A Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 80 V Emitter-base voltage VEBO 5 V Collector current IC 7 A Base current IB 1 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC 2.0 30 W JEDEC ― ― Tj 150 °C JEITA Tstg −55 to 150 °C TOSHIBA 2-10R1A Weight: 1.7 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2009-12-21
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