Power Transistors
2SB1499, 2SB1499A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
Allowing automatic insertion with radial taping
5.0±0.1
M
Di ain
sc te
on na
tin nc
ue e/
d
q
Unit: mm
Symbol
2SB1499
base voltage
2SB1499A
Collector to
Ratings
–60
VCBO
2SB1499
–80
–60
VCEO
emitter voltage 2SB1499A
Unit
90°
1.2±0.1
V
V
0.35±0.1
C1.0
2.25±0.2
0.65±0.1
1.05±0.1
0.55±0.1
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Collector to
1.0
2.5±0.2
Parameter
(TC=25˚C)
13.0±0.2
4.2±0.2
s Absolute Maximum Ratings
10.0±0.2
18.0±0.5
Solder Dip
q
–80
Emitter to base voltage
VEBO
–5
V
Peak collector current
ICP
–8
A
Collector current
IC
–4
0.55±0.1
A
Collector power TC=25°C
dissipation
Ta=25°C
Junction temperature
150
s Electrical Characteristics
Parameter
˚C
(TC=25˚C)
Symbol
Collector cutoff
2SB1499
current
2SB1499A
Collector cutoff
2SB1499
current
2SB1499A
1:Base
2:Collector
3:Emitter
MT4 Type Package
˚C
–55 to +150
Tstg
2.5±0.2
W
2
Tj
Storage temperature
1 2 3
2.5±0.2
15
PC
C1.0
Conditions
min
typ
max
2SB1499A
Base to emitter voltage
VCE = –30V, IB = 0
–700
VCE = –60V, IB = 0
–700
VEB = –5V, IC = 0
–1
VCEO
IC = –30mA, IB = 0
VCE = –4V, IC = –1A
70
VCE = –4V, IC = –3A
Unit
15
ICES
ICEO
Pl
Forward current transfer ratio
–400
hFE2
2SB1499
voltage
VCE = –80V, VBE = 0
hFE1*
Collector to emitter
–400
IEBO
Emitter cutoff current
VCE = –60V, VBE = 0
–60
–80
µA
µA
mA
V
250
VBE
VCE = –4V, IC = –3A
–2
V
Collector to emitter saturation voltage
VCE(sat)
IC = –4A, IB = – 0.4A
–1.5
V
Transition frequency
fT
VCE = –10V, IC = – 0.1A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
*h
FE1
IC = –4A, IB1 = – 0.4A, IB2 = 0.4A
30
MHz
0.2
µs
0.5
µs
0.2
µs
Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
1