K6R1016V1C-C/C-L, K6R1016V1C-I/C-P
for AT&T
CMOS SRAM
Document Title
64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating)
Operated at Commercial and Industrial Temperature Ranges.
Revision History
Rev. No.
History
Draft Data
Remark
Rev. 0.0
Initial release with Preliminary.
Aug. 5. 1998
Preliminary
Rev. 1.0
Release to Final Data Sheet.
1.1. Delete Preliminary.
1.2. Changed DC characteristics.
Item
ICC
12ns
15ns
20ns
Sep. 7. 1998
Final
Sep. 17. 1998
Final
Nov. 5. 1998
Final
Dec. 10. 1998
Final
Mar. 2. 1999
Final
Previous
85mA
83mA
80mA
Rev. 2.0
Added 48-fine pitch BGA.
Rev. 2.1
Changed
95mA
93mA
90mA
Changed device part name for FP-BGA.
Item
Previous
Symbol
Z
ex) K6R1016V1C-Z -> K6R1016V1C-F
Rev. 2.2
Rev. 3.0
Changed device ball name for FP-BGA.
Previous
I/O1 ~ I/O8
I/O9 ~ I/O16
Changed
F
Changed
I/O9 ~ I/O16
I/O1 ~ I/O8
1. Added 10ns speed for FP-BGA only.
2. Changed Standby Current.
Item
Previous
Standby Current(Isb1)
0.3mA
3. Added Data Retention Characteristics.
Changed
0.5mA
Rev. 3.1
Added 10ns speed for all packages(44SOJ / 44TSOP2 / 48FPBGA)
Apr. 24. 2000
Final
Rev. 3.2
Supply Voltage Change
1. Only 10ns Bin : 3.15V ~ 3.6V
2. The Rest Bin : 3.0V ~ 3.6V
Aug. 25. 2000
Final
Rev. 3.3
V IH/VIL Change
Oct. 2. 2000
Final
Sep. 24. 2001
Final
Item
V IH
V IL
Rev. 4.0
Previous
Min
2.0
-0.5
Max
V CC+0.5
0.8
Changed
Min
Max
2.0
V CC+0.3
-0.3
0.8
Delete 20ns speed bin
The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the
specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions,
please contact the SAMSUNG branch office near your office, call or contact Headquarters.
-1-
Revision 4.0
September 2001
