TPCF8302
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS IV)
TPCF8302
Notebook PC Applications
Portable Equipment Applications
Unit: mm
•
Low drain-source ON resistance: RDS (ON) = 44 mΩ (typ.)
•
High forward transfer admittance: |Yfs| = 6.2 S (typ.)
•
Low leakage current: IDSS = −10 μA (max) (VDS = −20 V)
•
Enhancement mode: Vth = −0.5 to −1.2 V
(VDS = −10 V, ID = −200 μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
−20
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
−20
V
Gate-source voltage
VGSS
±10
V
Drain current
DC
(Note 1)
ID
−3.0
Pulse
(Note 1)
IDP
−12
PD (1)
1.35
PD (2)
1.12
Single-device operation
(Note 3a)
Drain power
dissipation
(t = 5 s) (Note 2a) Single-device value at
dual operation (Note 3b)
Single-device operation
Drain power
(Note 3a)
dissipation
(t = 5 s) (Note 2b) Single-device value at
dual operation (Note 3b)
Single pulse avalanche energy
(Note 4)
A
JEITA
―
2-3U1B
Weight: 0.011 g (typ.)
0.53
PD (2)
―
TOSHIBA
W
PD (1)
JEDEC
Circuit Configuration
0.33
8
EAS
0.58
IAR
−1.5
EAR
0.11
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
1
2
3
4
mJ
Channel temperature
5
A
Repetitive avalanche energy
Single-device value at dual operation
(Note 2a, 3b, 5)
6
mJ
Avalanche current
7
°C
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Please handle with caution.
1
2009-09-29