RN2107F∼RN2109F
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process)
RN2107F,RN2108F,RN2109F
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Unit: mm
With built-in bias resistors
Simplify circuit design
Reduce a quantity of parts and manufacturing process
Complementary to RN1107F~RN1109F
Equivalent Circuit and Bias Resister Values
Type No.
R1 (kΩ)
R2 (kΩ)
RN2107F
10
47
RN2108F
22
47
RN2109F
47
22
JEDEC
⎯
JEITA
⎯
TOSHIBA
Weight: 2.3 mg (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage
Collector-emitter voltage
Symbol
RN2107F
~RN2109F
Rating
Unit
VCBO
−50
V
VCEO
−50
V
RN2107F
Emitter-base voltage
−6
VEBO
−7
IC
RN2108F
−100
mA
PC
100
mW
Tj
150
°C
Tstg
−55~150
°C
RN2109F
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2107F
~RN2109F
2-2HA1A
V
−15
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2007-11-01
