ON Semiconductort
High Speed, High Gain Bipolar
NPN Power Transistor with
Integrated Collector-Emitter
Diode and Built-in Efficient
Antisaturation Network
MJB18004D2T4
POWER TRANSISTORS
5 AMPERES
1000 VOLTS
75 WATTS
D2PAK For Surface Mount
The MJB18004D2T4 is state–of–art High Speed High gain Bipolar
transistor (H2BIP). High dynamic characteristics and lot to lot
minimum spread (±150 ns on storage time) make it ideally suitable for
light ballast applications. Therefore, there is no need to guarantee an
hFE window.
Main features:
MARKING DIAGRAM
• Low Base Drive Requirement
• High Peak DC Current Gain (55 Typical) @ IC = 100 mA
• Extremely Low Storage Time Min/Max Guarantees Due to the
YWW
MJB
18004D2
H2BIP Structure which Minimizes the Spread
• Integrated Collector–Emitter Free Wheeling Diode
• Fully Characterized and Guaranteed Dynamic VCE(sat)
• “6 Sigma” Process Providing Tight and Reproductible Parameter
Spreads
It’s characteristics make it also suitable for PFC application.
© Semiconductor Components Industries, LLC, 2001
June, 2001 – Rev. 0
1
D2PAK
CASE 418B
STYLE 1
Y
WW
= Year
= Work Week
Publication Order Number:
MJB18004D2T4/D
