MSB1218A−RT1
Preferred Device
PNP Silicon General
Purpose Amplifier
Transistor
This PNP Silicon Epitaxial Planar Transistor is designed for general
purpose amplifier applications. This device is housed in the
SC−70/SOT−323 package which is designed for low power surface
mount applications.
http://onsemi.com
COLLECTOR
3
Features
• High hFE, 210−460
• Low VCE(sat), < 0.5 V
• Pb−Free Package is Available
1
BASE
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
Collector−Base Voltage
V(BR)CBO
45
Vdc
Collector−Emitter Voltage
V(BR)CEO
45
Vdc
Emitter−Base Voltage
V(BR)EBO
7.0
Vdc
IC
100
mAdc
IC(P)
200
mAdc
Symbol
Max
Unit
Power Dissipation (Note 1)
PD
150
mW
Junction Temperature
TJ
150
°C
Storage Temperature Range
Tstg
−55 to +150
2
EMITTER
°C
Collector Current − Continuous
Collector Current − Peak
3
1
2
SC−70 (SOT−323)
CASE 419
STYLE 4
THERMAL CHARACTERISTICS
Rating
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Min
Max
Collector−Emitter Breakdown Voltage
(IC = 2.0 mAdc, IB = 0)
V(BR)CEO
45
−
Vdc
Collector−Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
45
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 10 mAdc, IE = 0)
V(BR)EBO
7.0
−
Vdc
Collector−Base Cutoff Current
(VCB = 20 Vdc, IE = 0)
ICBO
−
0.1
mA
Collector−Emitter Cutoff Current
(VCE = 10 Vdc, IB = 0)
ICEO
−
100
mA
DC Current Gain (Note 2)
(VCE = 10 Vdc, IC = 2.0 mAdc)
hFE1
210
340
−
VCE(sat)
−
0.5
Vdc
BR M G
G
Unit
Collector−Emitter Saturation Voltage
(Note 2) (IC = 100 mAdc, IB = 10 mAdc)
January, 2006 − Rev. 6
BR = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
1
Device
Package
Shipping †
MSB1218A−RT1
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Device mounted on a FR−4 glass epoxy printed circuit board using the
minimum recommended footprint.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
© Semiconductor Components Industries, LLC, 2006
1
SC−70
3000 /Tape & Reel
MSB1218A−RT1G
SC−70
3000 /Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MSB1218A−RT1/D
