OBSOLETE
256K x 8
BOOT BLOCK FLASH MEMORY
MT28F002B1
FLASH MEMORY
SMARTVOLTAGE
FEATURES
PIN ASSIGNMENT (Top View)
• Five erase blocks:
16KB boot block (protected)
Two 8KB parameter blocks
Two main memory blocks
• SmartVoltage Technology (SVT):
3.3V ±0.3V or 5V ±10% VCC
5V ±10% or 12V ±5% VPP
• Address access times:
60ns, 80ns at 5V VCC
90ns, 110ns at 3.3V VCC
• Industry-standard pinouts
• Inputs and outputs are fully TTL-compatible
• Automated write and erase algorithm
• Two-cycle WRITE/ERASE sequence
OPTIONS
40-Pin TSOP Type I
(C-2)
A16
A15
A14
A13
A12
A11
A9
A8
WE#
RP#
VPP
WP#
NC
A7
A6
A5
A4
A3
A2
A1
MARKING
• Timing (5V VCC/3.3V VCC)
60ns/90ns access
80ns/110ns access
-6
-8
• Boot Block Starting Address
Top (3FFFFH)
Bottom (00000H)
T
B
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
A17
VSS
NC
NC
A10
DQ7
DQ6
DQ5
DQ4
VCC
VCC
NC
DQ3
DQ2
DQ1
DQ0
OE#
VSS
CE#
A0
• Package
Plastic 40-pin TSOP Type 1 (10mm x 20mm) VG
• Part Number Example: MT28F002B1VG-8 T
GENERAL DESCRIPTION
block requires either applying a super-voltage to the RP#
pin or driving WP# HIGH in addition to executing the
normal WRITE or ERASE sequences. This block may be
used to store code implemented in low-level system
recovery. The remaining blocks vary in density and are
written and erased with no additional security measures.
The byte address is issued to read the memory array with
CE# and OE# LOW and WE# HIGH. Valid data is output
until the next address is issued, or CE# or OE# goes HIGH.
Please refer to Micron’s Web site (www.micron.com/
flash/htmls/datasheets.html) for the latest full-length data
sheet.
The MT28F002B1 is a nonvolatile, electrically blockerasable (flash), programmable read-only memory containing 2,097,152 bits organized as 262,144 words by 8 bits.
SmartVoltage Technology (SVT) provides industrystandard, multi- or single-voltage, dual-supply operation.
Writing or erasing the device is done with either a 5V or 12V
VPP voltage, while all operations are performed with a 3.3V
or 5V VCC. It is fabricated with Micron’s advanced CMOS
floating-gate process.
The MT28F002B1 is organized into five separately erasable
blocks. To ensure that critical firmware is protected from
accidental erasure or overwrite, the MT28F002B1 features a
hardware-protected boot block. Writing or erasing the boot
256K x 8 Boot Block Flash Memory
F18.p65 – Rev. 2/99
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©1999, Micron Technology, Inc.
Micron is a registered trademark of Micron Technology, Inc.
