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SEMICONDUCTOR TECHNICAL DATA
™ Data Sheet
TMOS E-FET.™
Power Field Effect Transistor
Designer's
MTP20N20E
Motorola Preferred Device
N–Channel Enhancement–Mode Silicon Gate
TMOS POWER FET
20 AMPERES
200 VOLTS
RDS(on) = 0.16 OHM
This advanced TMOS E–FET is designed to withstand high
energy in the avalanche and commutation modes. The new energy
efficient design also offers a drain–to–source diode with a fast
recovery time. Designed for low voltage, high speed switching
applications in power supplies, converters and PWM motor
controls, these devices are particularly well suited for bridge circuits
where diode speed and commutating safe operating areas are
critical and offer additional safety margin against unexpected
voltage transients.
®
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
D
G
CASE 221A–06, Style 5
TO–220AB
S
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDSS
200
Vdc
Drain–Gate Voltage (RGS = 1.0 MΩ)
VDGR
200
Vdc
Gate–Source Voltage — Continuous
— Non–Repetitive (tp ≤ 10 ms)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain — Continuous
— Continuous @ 100°C
— Single Pulse (tp ≤ 10 µs)
ID
ID
IDM
20
12
60
Adc
Total Power Dissipation
Derate above 25°C
PD
125
1.0
Watts
W/°C
TJ, Tstg
– 55 to 150
°C
Single Pulse Drain–to–Source Avalanche Energy — Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 Ω)
EAS
600
mJ
Thermal Resistance — Junction to Case
— Junction to Ambient
RθJC
RθJA
1.00
62.5
°C/W
TL
260
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
Apk
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
Preferred devices are Motorola recommended choices for future use and best overall value.
REV 2
© Motorola TMOS
Motorola, Inc. 1995
Power MOSFET Transistor Device Data
1
