PN2221
PN2222
PN2221A
PN2222A
NPN SILICON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR PN2221, PN2222
series types are silicon NPN epitaxial planar transistors
designed for small signal, general purpose switching
applications.
MARKING: FULL PART NUMBER
TO-92 CASE
MAXIMUM RATINGS: (TA=25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
PN2221
PN2222
60
30
5.0
PN2221
PN2222
MIN
MAX
10
10
60
30
5.0
0.4
1.6
1.3
2.6
PN2221
PN2221A
MIN
MAX
VCE=10V, IC=0.1mA
20
VCE=10V, IC=1.0mA
25
VCE=10V, IC=10mA
35
VCE=10V, IC=150mA
40
120
VCE=1.0V, IC=150mA
20
VCE=10V, IC=500mA (PN2221, PN2222)
20
VCE=10V, IC=500mA (PN2221A, PN2222A)
25
VCE=20V, IC=20mA, f=100MHz (except PN2222A) 250
VCE=20V, IC=20mA, f=100MHz (PN2222A)
VCB=10V, f=100kHz
8.0
VCC=30V, IC=150mA, IB=15mA
35
VCC=30V, IC=150mA, IB1=IB2=15mA
285
ELECTRICAL CHARACTERISTICS: (TA=25°C)
SYMBOL
TEST CONDITIONS
ICBO
VCB=50V
ICBO
VCB=60V
ICEV
VCE=60V, VEB=3.0V
IEBO
VEB=3.0V
BVCBO
IC=10μA
BVCEO
IC=10mA
BVEBO
IE=10μA
VCE(SAT)
IC=150mA, IB=15mA
VCE(SAT)
IC=500mA, IB=50mA
VBE(SAT)
IC=150mA, IB=15mA
VBE(SAT)
IC=500mA, IB=50mA
hFE
hFE
hFE
hFE
hFE
hFE
hFE
fT
fT
Cob
ton
toff
SYMBOL
VCBO
VCEO
VEBO
IC
PD
TJ, Tstg
PN2221A
PN2222A
75
40
6.0
800
625
-65 to +150
PN2221A
PN2222A
MIN
MAX
10
10
10
75
40
6.0
0.3
1.0
1.2
2.0
PN2222
PN2222A
MIN
MAX
35
50
75
100
300
50
30
40
250
300
8.0
35
285
UNITS
V
V
V
mA
mW
°C
UNITS
nA
nA
nA
nA
V
V
V
V
V
V
V
MHz
MHz
pF
ns
ns
R1 (30-January 2012)
