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PTB 20258
6 Watts, 915–960 MHz
Cellular Radio RF Power Transistor
Description
The 20258 is a class AB, NPN, common emitter RF power transistor
intended for 25 Vdc operation from 915 to 960 MHz. Rated at 6 watts
minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
6 Watts, 915–960 MHz
Class AB Characteristics
50% Typ Collector Efficiency at 6 Watts
Tested to solderability standards:
- IEC-68-2-54
- ANSI/J Std-002-A
Gold Metallization
Silicon Nitride Passivated
Typical Output Power and Efficiency vs. Input Power
80
8
68
6
Efficiency
56
4
44
VCC = 25 V
ICQ = 27 mA
f = 960 MHz
2
Efficiency (%)
Output Power (Watts)
Output Power
20
25
8
LO
TC
OD
E
32
0
20
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
Input Power (Watts)
Package 20208
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-Emitter Voltage
VCER
55
Vdc
Collector-Base Voltage
VCBO
60
Vdc
Emitter-Base Voltage (collector open)
VEBO
4.0
Vdc
Collector Current (continuous)
IC
1.7
Adc
Total Device Dissipation at Tflange = 25°C
PD
22
Watts
0.125
W/°C
Above 25°C derate by
Storage Temperature Range
Tstg
-40 to +150
°C
Thermal Resistance (Tflange = 70°C)
RθJC
8
°C/W
1
7-21-98
