RF2421
0
10dB SWITCHED ATTENUATOR
Typical Applications
• Power Control in Communication Systems
• Commercial and Consumer Systems
• CMOS Compatible Programmable
• Portable Battery-Powered Equipment
Attenuator
0.196
0.189
E
S
0.050
N
E
W
8° MAX
0° MIN
Optimum Technology Matching® Applied
GaAs HBT
Si Bi-CMOS
SiGe HBT
InGaP/HBT
GaN HEMT
!
Dimensions in mm
0.244
0.229
0.034
0.016
0.009
0.007
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity 0.005 with respect to datum "A".
Package Style: SOIC-8
Si CMOS
Features
SiGe Bi-CMOS
• Single 2.7V to 6V Supply
FO
N
O
T
NC 1
0.157
0.150
GaAs MESFET
R
Si BJT
-A0.008
0.004
0.018
0.014
D
The RF2421 is a monolithic switched attenuator. The
device is built using a Gallium Arsenide process technology and has a single step attenuation of 10dB. The input
and output of the device has a low VSWR 50Ω match.
The RF output can drive up to +16dBm. This unit is
intended for use in systems that require RF power control
by digital means. No negative supply voltages are
required, and the current consumption is less than 5 µA
when the attenuator is off.
IG
N
S
Product Description
• 10dB Single Step Attenuation
• 1 dB Insertion Loss
• 1-bit Digitally Controlled Attenuation
• Digitally Controlled Power Down Mode
8 NC
• 500MHz to 3000 MHz Operation
RF IN 2
7 G10
GND 3
6 VDD
RF OUT4
Ordering Information
5 NC
Functional Block Diagram
RF2421
RF2421 PCBA
10dB Switched Attenuator
Fully Assembled Evaluation Board
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
NOT FOR NEW DESIGNS
Rev B1 030129
9-7