[ /Title
(RFF60P
06)
/Subject
(25A,
60V,
0.030
Ohm,
P-Channel
Power
MOSFET)
/Author
()
/Keywords
(Harris
Semiconductor,
P-Channel
Power
MOSFET,
TO254AA)
/Creator
()
/DOCIN
FO pdfmark
RFF60P06
Semiconductor
25A, 60V, 0.030 Ohm,
P-Channel Power MOSFET
September 1998
Features
Description
• 25A†, 60V
The RFF60P06 P-Channel power MOSFET is manufactured
using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits gives optimum
utilization of silicon, resulting in outstanding performance. It
was designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated
circuits.
• rDS(ON) = 0.030Ω
• Temperature Compensating PSPICE Model
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 150oC Operating Temperature
Reliability screening is available as either commercial or
TX/TXV equivalent of MIL-S-19500. Contact Harris Semiconductor High-Reliability Marketing group for any desired
deviations from the data sheet.
• Reliability Screened
Ordering Information
PART NUMBER
RFF60P06
PACKAGE
BRAND
TO-254AA
RFF60P06
Symbol
D
NOTE: When ordering, use the entire part number.
Formerly developmental type TA09835.
Commercial Version: RFG60P06E.
G
† Current is limited by the package capability.
S
Packaging
JEDEC TO-254AA
GATE
SOURCE
DRAIN
PACKAGE TAB
(ISOLATED)
CAUTION: Berylia Warning per MIL-S-19500.
Refer to package specifications.
[ /PageMode
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright
© Harris Corporation 1998
6-1
File Number
3975.2
