FJN4306R
FJN4306R
Switching Application (Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R1=10KΩ, R2=47KΩ)
• Complement to FJN3306R
TO-92
1
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
VCBO
Parameter
Collector-Base Voltage
Value
-50
VCEO
VEBO
Collector-Emitter Voltage
-50
V
Emitter-Base Voltage
-10
V
IC
Collector Current
-100
mA
PC
Collector Power Dissipation
300
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-55 ~ 150
Equivalent Circuit
Units
V
°C
C
R1
B
R2
E
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
BVCBO
Parameter
Collector-Base Breakdown Voltage
Test Condition
IC= -10µA, IE=0
Min.
-50
BVCEO
Collector-Emitter Breakdown Voltage
IC= -100µA, IB=0
-50
ICBO
Collector Cut-off Current
VCB= -40V, IE=0
hFE
DC Current Gain
VCE= -5V, IC= -5mA
VCE(sat)
Collector-Emitter Saturation Voltage
Output Capacitance
VCB= -10V, IE=0
f=1.0MHz
Units
V
µA
V
68
-0.3
V
5.5
Current Gain Bandwidth Product
VCE= -10V, IC= -5mA
Input Off Voltage
VCE= -5V, IC= -100µA
VI(on)
Input On Voltage
Input Resistor
7
R1/R2
Resistor Ratio
0.19
MHz
VCE= -0.3V, IC= -1mA
R1
pF
200
fT
VI(off)
©2002 Fairchild Semiconductor Corporation
Max.
-0.1
IC= -10mA, IB= -0.5mA
Cob
Typ.
-0.3
V
-1.4
V
10
13
KΩ
0.21
0.24
Rev. A, July 2002
