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SI2301DS-T1
Si2301DS Vishay Siliconix P-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.130 @ VGS = - 4.5 V - 2.3 0.190 @ VGS = - 2.5 V - 1.9 TO-236 (SOT-23) G 1 3 S D Ordering Information: Si2301DS-T1 2 Top View Si2301DS (A1)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Drain-Source Voltage VDS - 20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C)b TA= 25_C ID TA= 70_C Pulsed Drain Currenta - 1.5 - 10 IS TA= 25_C Power Dissipationb Operating Junction and Storage Temperature Range A - 1.6 PD TA= 70_C V - 2.3 IDM Continuous Source Current (Diode Conduction)b Unit 1.25 0.8 W TJ, Tstg - 55 to 150 _C Symbol Limit Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Maximum Junction-to-Ambientc 100 RthJA 166 _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 5 sec. c. Surface Mounted on FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70627 S-31990—Rev. E, 13-Oct-03 www.vishay.com 1
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